Published May 25, 2007
| Version v1
Journal article
In and Al composition in nano-Cu(InAl)Se2 thin films from XRD and transmittance spectra
Creators
- 1. PG and Research Department of Physics, Kongunadu Arts and Science College, Coimbatore 641029, Tamil Nadu (India)
Description
Cu(InAl)Se2 (CIAS) thin films of different thicknesses were prepared by chemical bath deposition technique (CBD) onto well-cleaned substrates at different temperatures from two different chemical baths. The thickness of the deposited films has been determined by gravimetric technique. The composition of indium and aluminum constituents in the prepared CIAS films has been found from XRD and transmittance spectra. The results were confirmed with energy dispersive X-ray analysis (EDAX) and are presented in detail in this paper
Additional details
Identifiers
- DOI
- 10.1016/j.mseb.2007.03.011;
- PII
- S0921-5107(07)00138-9;
Publishing Information
- Journal Title
- Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
- Journal Volume
- 140
- Journal Issue
- 1-2
- Journal Page Range
- p. 59-63
- ISSN
- 0921-5107
- CODEN
- MSBTEK
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38087344
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM; CHEMICAL COMPOSITION; COPPER SELENIDES; DEPOSITION; INDIUM; SPECTRA; SUBSTRATES; THICKNESS; THIN FILMS; X-RAY DIFFRACTION
- Descriptors DEC
- CHALCOGENIDES; COHERENT SCATTERING; COPPER COMPOUNDS; DIFFRACTION; DIMENSIONS; ELEMENTS; FILMS; METALS; SCATTERING; SELENIDES; SELENIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.