Ion beam induced modification of metal-engineering ceramic interfaces. Pt. 2

100 nm thick chromium layers were deposited on hot-pressed silicon nitride ceramics and irradiated at room temperature with 430 keV Si+ ions to fluences ranging from 2.5 x 1015 to 4 x 1016 ions cm-2. RBS, TEM and XPS techniques were used for the characterization of the irradiated structures. There is no ion induced interfacial layer, but a very limited reaction takes place between the metal film and the substrate with at least one reaction product, CrN. Some preliminary results on adhesion enhancement are also presented and the role of pre-deposition sputter cleaning of the substrate is discussed. (orig.)