Published January 1, 2015 | Version v1
Journal article

Effect of thickness on structural and electrical properties of Al-doped ZnO films

  • 1. Instituto de Física del Litoral (CONICET-UNL), Güemes 3450, Santa Fe S3000GLN (Argentina)
  • 2. Facultad de Ingeniería Química, Universidad Nacional del Litoral, Santiago del Estero 2829, Santa Fe S3000AOM (Argentina)

Description

In this work, we have investigated the influence of thickness on structural and electrical properties of Al-doped ZnO films. Transparent conducting oxide films were grown by the spray pyrolysis technique from precursors prepared via the sol–gel method. We determined the structural properties of the films by performing X-ray diffraction and mosaicity measurements, which evidenced an increase of disorder and inhomogeneity between crystalline domains as the films thickened. This behavior was contrasted with results obtained from electrical measurements and was attributed to plastic deformation of the films as their thickness increased. As a result, the carrier mobility, the optical gap and the activation energy are affected due to emerging grain boundaries and a higher degree of disorder. - Highlights: • Al-doped ZnO thin films on glass with different thicknesses • Film thickness affects the morphological and electrical properties. • Increasing time deposition allows modification of resistivity and Hall mobility. • Mosaicity between crystalline domains increases with film thickness

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2014.12.013

Additional details

Identifiers

DOI
10.1016/j.tsf.2014.12.013;
PII
S0040-6090(14)01270-X;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
574
Journal Page Range
p. 162-168
ISSN
0040-6090
CODEN
THSFAP

Optional Information

Copyright
Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.