Published December 2013
| Version v1
Journal article
A novel memory testing system focused on single-event effect
Creators
- 1. Institute of Microelectronics, Chinese Academy of Sciences, Beijing (China)
Description
The memory cells fabricated with smaller technology node are faster and have different single-event effect attribute than the previous generation. A new memory testing system has been designed to fulfill the demand to test the memory's single-event effect completely and efficiently based on the FPGA and the LabVIEW virtual instrument. The testing system can be configured flexibly according to the memory under test, and has been verified in real single-event testing. (authors)
Additional details
Publishing Information
- Journal Title
- Nuclear Electronics and Detection Technology
- Journal Volume
- 33
- Journal Issue
- 12
- Journal Page Range
- p. 1519-1522, 1436
- ISSN
- 0258-0934
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 49064797
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- DESIGN; ELECTRONIC EQUIPMENT; GATING CIRCUITS; LOGIC CIRCUITS; MEMORY DEVICES; PHYSICAL RADIATION EFFECTS; SINGLE-PARTICLE MODES; TESTING
- Descriptors DEC
- ELECTRONIC CIRCUITS; EQUIPMENT; OSCILLATION MODES; RADIATION EFFECTS
Optional Information
- Notes
- 5 figs., 1 tab., 4 refs.