Published February 1986
| Version v1
Report
Feasibility study on preamorphisation with Ge ions followed by RTA for junction depth control in silicon
Description
A feasibility study on pre-amorphisation with Ge ions followed by rapid thermal annealing [GERTA process] for junction depth control in silicon was carried out. The study showed that the GERTA process could reduce channelling and radiation enhanced diffusion in emitter-base junctions formed with boron implanted dopants. B+ doped regions with depths significantly reduced compared to B+ only implants were obtained. (UK)
Availability note (English)
Available from H.M. Stationery Office, London, price Pound4.00.Additional details
Publishing Information
- ISBN
- 0-7058-1383-5
- Imprint Pagination
- 18 p.
- Report number
- AERE-R--12117
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 17074817
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Numerical Data, Non-conventional Literature
- Descriptors DEI
- AMORPHOUS STATE; ANNEALING; BORON IONS; CHANNELING; COMPARATIVE EVALUATIONS; DEPTH; DIFFUSION; DOPED MATERIALS; EXPERIMENTAL DATA; FEASIBILITY STUDIES; GERMANIUM IONS; ION IMPLANTATION; SEMICONDUCTOR JUNCTIONS; SILICON
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; DATA; DIMENSIONS; ELEMENTS; EVALUATION; HEAT TREATMENTS; INFORMATION; IONS; MATERIALS; NUMERICAL DATA; SEMIMETALS