Transparent conductive Cd3TeO6 thin films with perovskite structure

Transparent conductive Cd3TeO6 thin films were deposited by radio-frequency magnetron sputtering using a target composed of CdO and TeO2 powders, and these films' electrical and optical properties were examined. The electrical resistivity of 1.9x10-2 Ω cm and an average transmittance above 85% in the visible region (400-800 nm) were obtained after annealing the film at 500 deg. C. The film's carrier density and Hall mobility were 8.7x1019 cm-3 and 6.8 cm2 V-1 s-1, respectively. The absorption edge of the films was shifted to a lower wavelength by increasing the carrier density. The maximum band gap of these films was found to be 3.69 eV