Published January 2006
| Version v1
Journal article
Incorporation of active Fe impurities in GaInP by high temperature ion implantation
Creators
- 1. INFM and University of Padova, Dipartimento di Fisica, Via F. Marzolo 8, I-35131 Padova (Italy)
- 2. INFM and University of Bologna, Dipartimento di Fisica, V.le Berti-Pichat 6/2, I-40137 Bologna (Italy)
- 3. INFM and University of Catania, Dipartimento di Fisica e Astronomia, Via S. Sofia 64, I-95123 Catania (Italy)
- 4. INFM and University of Parma, Dipartimento di Fisica, Parco Area delle Scienze 7a, I-43100 Parma (Italy)
Description
Single GaInP layers, grown by MOVPE lattice matched to GaAs, were implanted with Fe at T = 200 deg. C and annealed at 450 or 600 deg. C. The role of implantation temperature and fluence in determining the crystal damage, and the damage recovery by annealing are investigated by RBS-channeling measurements. The redistribution of the Fe atoms is studied by means of SIMS depth profiling. The electrical properties related to Fe implantation are studied by current-voltage measurements. The results allow a first analysis of the similarities and the differences showed by the Fe implanted GaInP with respect to the InP case
Additional details
Identifiers
- DOI
- 10.1016/j.nimb.2005.08.152;
- PII
- S0168-583X(05)01627-7;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 242
- Journal Issue
- 1-2
- Journal Page Range
- p. 653-655
- ISSN
- 0168-583X
- CODEN
- NIMBEU
Conference
- Title
- 14. international conference on ion beam modification of materials
- Dates
- 5-10 Sep 2004
- Place
- Pacific Grove, CA (United States)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37068541
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; CHANNELING; CRYSTALS; DAMAGE; DEPTH; ELECTRICAL PROPERTIES; GALLIUM ARSENIDES; IMPURITIES; INDIUM PHOSPHIDES; ION IMPLANTATION; ION MICROPROBE ANALYSIS; MASS SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; TEMPERATURE RANGE 0400-1000 K
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CHEMICAL ANALYSIS; DIMENSIONS; GALLIUM COMPOUNDS; HEAT TREATMENTS; INDIUM COMPOUNDS; MICROANALYSIS; NONDESTRUCTIVE ANALYSIS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SPECTROSCOPY; TEMPERATURE RANGE
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.