Published March 2019 | Version v1
Journal article

Light-controlled resistive switching and voltage-controlled photoresponse characteristics in the Pt/CeO2/Nb:SrTiO3 heterostructure

  • 1. School of Physics and Technology, The Key Laboratory of Artificial Micro/Nano Structures of Ministry of Education, Wuhan University, Wuhan, 430072, PR (China)
  • 2. School of Science, Hubei University of Technology, Wuhan, 430068, PR (China)
  • 3. School of Information Engineering, Hubei University for Nationalities, Enshi, 445000, Hubei, PR (China)

Description

The Pt/CeO2/Nb:SrTiO3 heterostructure that exhibits excellent resistive switching (RS) behavior of a maximum RS ratio of 3 × 104, good retention and multilevel memory is prepared. Obvious photoresponse was observed in this device under the illumination of a laser beam of 405 nm wavelength, which exhibits significant switching characteristics at high resistance state. Both light-controlled RS and voltage-controlled photoresponse are demonstrated in this device. Such RS and photoresponse characteristics can be attributed to the Schottky barrier of Pt/CeO2 interface and the electrons trapping/detrapping by oxygen vacancies near the interface. Our work demonstrated feasibility for making multilevel RS memories and for use in multifunctional photoelectric sensors.

Additional details

Identifiers

DOI
10.1016/j.jallcom.2018.11.161;
PII
S0925838818342841;

Publishing Information

Journal Title
Journal of Alloys and Compounds
Journal Volume
778
Journal Page Range
p. 141-147
ISSN
0925-8388
CODEN
JALCEU

Optional Information

Copyright
Copyright (c) 2018 Elsevier B.V. All rights reserved.