Effects of ionizing radiation on thin-film semiconductor devices

Results of an investigation of the transient and permanent effects of ionizing radiation on Al2O3-CdSe thin-film transistors and microcircuits are reported. The total-gamma-dose response of the devices did not differ significantly from that of conventional silicon MOS devices, and the observed shift in threshold voltage is consistent with a positive charge buildup in the gate oxide. In transient response studies, it was found that the thin-film devices will perform without failure up to peak dose rates of ~1010 rads(Si)/s (~30 ns pulsewidth).