Investigation of ion-electron emission relaxation effect of silicon and germanium monocrystals

The influence of change of the irradiated surface area and ion-bombardment dose before the srystal orientation change on the character of a temporal course of the ion-electron emission (IEE) coefficient is investigated. The model of the defects redistribution in the near-surface layer is shown to be adequate to the investigated dependences of the IEE coefficient relaxation on the dose and intensity of the ion bombardment, crystallographic direction and temperature of the crystal. The possibility is shown for the determination of the profile depth of the implanted atoms stationary distribution