Published May 2006 | Version v1
Journal article Metadata-only

Features of reception of a thin film AlGaAs on structures with textured by surface

Creators

  • 1. Physical-Technical Institute AS RU, NPO 'Physics-Sun', Tashkent (Uzbekistan)

Description

Thin film AlGaAs on various textured surfaces it is possible to receive in the combined device providing separately processes diffusion and cultivation epitaxial of layers. This the thickness received diffusion of a layer pGaAs should be 2-3 microns, from which certain part of the top layer dissolve at the moment of contact to a solution - melt (Ga + GaAs + Zn + Al) and further grow heterolayer pAlGaAs. (author)

Additional details

Additional titles

Original title (Russian)
Особенности получения тонкой пленки AlGaAs на структурах с текстурированной поверхностью

Publishing Information

Journal Title
Uzbekiston Respublikasi Fanlar Akademiyasining Maruzalari
Journal Issue
no.3
Journal Page Range
p. 27-30
ISSN
1019-8954

INIS

Country of Publication
Uzbekistan
Country of Input or Organization
Uzbekistan
INIS RN
39122836
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ALUMINIUM; CRYSTAL GROWTH; GALLIUM ARSENIDES; LIQUID PHASE EPITAXY; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; PHOTODETECTORS; PHOTOVOLTAIC EFFECT; SUPERCONDUCTING FILMS; TEMPERATURE RANGE 1000-4000 K; THIN FILMS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; ELEMENTS; EPITAXY; FILMS; GALLIUM COMPOUNDS; MATERIALS; METALS; PHOTOELECTRIC EFFECT; PNICTIDES; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE

Optional Information

Notes
3 refs., 2 figs.