Published March 22, 2005 | Version v1
Journal article

Characterization of a capacitively coupled RF plasma for SiO2 deposition: numerical and experimental results

  • 1. LPMIA, UMR CNRS 7040, Universite H. Poincare, BP239, 54506 Vandoeuvre les Nancy (France)
  • 2. LSGS, UMR CNRS 7570, INPL, Ecole des Mines, Parc de Saurupt, 54042 Nancy Cedex (France)

Description

A fluid model including an electron beam of hot electrons is presented and used to describe the transport of charged particles in a 13.56-MHz O2 plasma. An increase in the electron density when the RF power increases is observed from Langmuir probe measurements. The calculated evolution of the electron number density shows a reasonable agreement if the secondary emission coefficient is chosen equal to 10-4 on a steel (316L) electrode. The values of the plasma potential increase with increasing RF power from 30 to 35 V at 0.5-0.6 Torr, in the range 100-300 W. Surprisingly, the electron temperature decreases with increasing applied RF power. No clear explanation for this behavior is available yet

Additional details

Identifiers

DOI
10.1016/j.tsf.2004.07.027;
PII
S0040-6090(04)00955-1;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
475
Journal Issue
1-2
Journal Page Range
p. 118-123
ISSN
0040-6090
CODEN
THSFAP

Conference

Title
4. Asian-European international conference on plasma surface engineering
Dates
28 Sep - 3 Oct 2003
Place
Jeju City (Korea, Republic of)

Optional Information

Copyright
Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.