Thermoelectric properties of wires Bi2Te3 in the glass coating p and n type
- 1. Inst. of Electronic Engineering and Nanotechnologies 'D. Ghitu', Academy of Sciences of Moldova, Academiei str. 3/3, MD-2028 Chisinau, (Moldova, Republic of)
Description
The aim of our research was to prepare micro- and nanowires of n- and p-type Bi2Te3 in glass insulation and to study their thermoelectric properties as a function of heat treatment, i.e., annealing, recrystallization, and wire diameter. The n- and p-type Bi2Te3 wires in glass insulation were prepared via liquid-phase casting through heating a glass tube containing the Bi2Te3 material of the appropriate composition using an outer furnace. For the first time, by re-drawing wires vitrified Bi2Te3 were obtained with the wires diameter up to 1 mkm. Due to the fact that the resistivity of the thin wires (d = 2 mkm) is almost an order of magnitude smaller than in the wires of p-type Bi2Te3 (d> 50 mkm), Power factor= α2σ at 300 K = 3,5*10-5 W/cm*K2 exceeds the maximum P.f= 1,2*10-5 W/cm*K2, obtained in wires with d> 50 mkm, even after additional annealing for 24 hours. It has been shown that the isothermal annealing increases both thermopower α and resistivity ρ in the samples of hole conductivity; unlike p-type, the parameters α and ρ vary only slightly after annealing. The parameters of the annealed samples hardly changed during the entire test period. Therefore, it is recommended to subject Bi2Te3 wires in glass insulation to an additional long-term annealing at appropriate temperatures in the case of their use in thermoelectric energy converters. Index Terms - Bi2Te3 microwires, annealing, Power factor. (authors)
Additional details
Publishing Information
- Publisher
- Technical University of Moldova
- Imprint Place
- Chisinau (Moldova, Republic of)
- ISBN
- 978-9975-45-174-1
- Imprint Title
- ICMCS-2011: 7. international conference on microelectronics and computer science. Proceedings
- Imprint Pagination
- 470 p.
- Journal Page Range
- p. 84-86
- Report number
- INIS-MD--010
Conference
- Title
- 7. international conference on microelectronics and computer science
- Acronym
- ICMCS-2011
- Dates
- 22-24 Sep 2011
- Place
- Chisinau (Moldova, Republic of)
INIS
- Country of Publication
- Moldova, Republic of
- Country of Input or Organization
- Moldova, Republic of
- INIS RN
- 42091488
- Subject category
- S36: MATERIALS SCIENCE; S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Resource subtype / Literary indicator
- Conference, Non-conventional Literature
- Descriptors DEI
- ANNEALING; BISMUTH COMPOUNDS; BISMUTH TELLURIDES; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; HEAT TREATMENTS; MICROSTRUCTURE; NANOSTRUCTURES; PHYSICAL PROPERTIES; RECRYSTALLIZATION; TELLURIUM COMPOUNDS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE; THERMOELECTRIC PROPERTIES; WIRES
- Descriptors DEC
- BISMUTH COMPOUNDS; CHALCOGENIDES; ELECTRICAL PROPERTIES; HEAT TREATMENTS; PHYSICAL PROPERTIES; TELLURIDES; TELLURIUM COMPOUNDS
Optional Information
- Notes
- 16 refs., 6 figs.