Published September 21, 1996
| Version v1
Journal article
Transport and charge collection in compensated GaAs particle detectors
- 1. Tomskij Gosudarstvennyj Univ., Tomsk (Russian Federation). Sibirskij Fiziko-Technicheskij Inst.
Description
High resistivity π-ν-n structures are shown to differ significantly from traditional drift detectors. It has been found that the amount of charge formed by a minimum ionizing particle (mip) in these structures does not depend on the bias. We consider this phenomenon to be associated with the relaxation properties of these structures because τd >>τ0. (orig.)
Additional details
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 379
- Journal Issue
- 3
- Journal Page Range
- p. 409-410.
- ISSN
- 0168-9002
- CODEN
- NIMAER
Conference
- Title
- 6. international conference on instrumentation for experiments at e+e-colliders.
- Dates
- 29 Feb - 6 Mar 1996.
- Place
- Novosibirsk (Russian Federation).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 28005813
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHARGE COLLECTION; CHARGED PARTICLE DETECTION; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; GALLIUM ARSENIDES; JUNCTION DETECTORS; PHYSICAL RADIATION EFFECTS; RELAXATION; RELAXATION TIME; SEMICONDUCTOR JUNCTIONS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; DETECTION; ELECTRICAL PROPERTIES; GALLIUM COMPOUNDS; MEASURING INSTRUMENTS; PHYSICAL PROPERTIES; PNICTIDES; RADIATION DETECTION; RADIATION DETECTORS; RADIATION EFFECTS; SEMICONDUCTOR DETECTORS