Published 2002 | Version v1
Miscellaneous Metadata-only

Structural properties of near-surface region of GaAs implanted by indium ions

Creators

  • 1. Belarussian State University, Minsk (Belarus)
  • 2. Maria Curie-Sklodowska University, Lublin (Poland)
  • 3. Joint Institute for Nuclear Research, Dubna (Russian Federation)

Description

no abstract available

Part of:
Abstracts of International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2002

Additional details

Publishing Information

Imprint Title
Abstracts of International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2002
Imprint Pagination
174 p.
Journal Page Range
p. 90

Conference

Title
4. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2002
Dates
10-13 Jun 2002
Place
Kazimierz Dolny (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
34075151
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
ATOMIC FORCE MICROSCOPY; BACKSCATTERING; CRYSTAL DEFECTS; ELECTRON MICROSCOPY; GALLIUM ARSENIDES; INDIUM IONS; ION IMPLANTATION; MICROSTRUCTURE; OXIDES; PHYSICAL RADIATION EFFECTS; RESONANCE SCATTERING; ROUGHNESS; RUTHERFORD SCATTERING; SURFACE TREATMENTS; THICKNESS; X-RAY SPECTRA
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CHALCOGENIDES; CHARGED PARTICLES; CRYSTAL STRUCTURE; DIMENSIONS; ELASTIC SCATTERING; GALLIUM COMPOUNDS; INELASTIC SCATTERING; IONS; MICROSCOPY; OXYGEN COMPOUNDS; PNICTIDES; RADIATION EFFECTS; SCATTERING; SPECTRA; SURFACE PROPERTIES

Optional Information