Published January 2006 | Version v1
Journal article

Studies of the composition, mechanical and electrical properties of N-doped carbon films prepared by DC-MFCAD

  • 1. College of Science and Technology, Hainan University, Haikou 570228 (China)
  • 2. Key Laboratory of Biomaterial Surface Modification of Sichuan, Laboratory of Advanced Materials Processing of Chinese Education Ministry, Southwest Jiaotong University, Chengdu 610031 (China)
  • 3. School of Material Science and Engineering, Northwest Polytechnical University, State Key Laboratory of Solidification Processing, Xi'an 710072 (China)

Description

N-doped carbon films were prepared on Si(1 0 0) and Ti-6Al-4V substrates using direct current magnetically filtered cathodic arc deposition (DC-MFCAD) at room temperature for various different N2 pressures. The structure and composition of the films were characterized by Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). Ball-on-disk and microhardness tests were used to characterize the mechanical properties of the films, and Hall effect tests were employed to study the electrical properties

Additional details

Identifiers

DOI
10.1016/j.nimb.2005.08.070;
PII
S0168-583X(05)01537-5;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
Journal Volume
242
Journal Issue
1-2
Journal Page Range
p. 324-327
ISSN
0168-583X
CODEN
NIMBEU

Conference

Title
14. international conference on ion beam modification of materials
Dates
5-10 Sep 2004
Place
Pacific Grove, CA (United States)

Optional Information

Copyright
Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.