Electric current modulation by gate frequency in a quantum ring nanotransistor

We presented a computational study of a dynamical gate effect applied to a tight-binding model of a ring-shaped quantum-interference nanotransistor. Compared to our former analysis, we used a model of the gate that not only controls on-site energies of the atoms but can also transfer electrons to or from the device. We have found that the electric current is modulated by the gate frequency also in this more general model. The simulations have been performed using our home-developed generalised stroboscopic wave packet approach which is very suitable for open systems and time-dependent effects. (authors)