Visualization and investigation of the non-thermalized electrons in an InAs nanowire by scanning gate microscopy

We performed scanning gate microscopy measurements on an InAs nanowire at T  =  4.2 K in an external magnetic field. We visualizeded non-thermalized electrons passed under narrow metallic contact. It was found that, for such kind of electrons, suppression of the weak antilocalization quantum correction occurs with a magnetic field at least three times smaller than the corresponding one measured for the whole electronic system of the wire. (paper)