Characterization of silicon carbide whiskers

This paper presents SiC whiskers from six manufacturers characterized by bulk chemical techniques, X- ray photoelectron spectroscopy, X-ray diffraction, and scanning transmission electron microscopy or scanning electron microscopy. Major component (C, Si, and O) surface chemistries of the whiskers fell into four general categories: high oxygen content with oxide resembling SiO2, high oxygen content with oxide resembling a Si-O- C glass, low oxygen content with oxide resembling a Si-O-C glass, and hydrocarbon. Several whiskers exhibited significant surface impurities - in particular, Fe. From a morphological viewpoint, significant differences in diameter, debris level, straightness, and types and quantities of defects were observed from one manufacturer to another