Lateral IBIC analysis of GaAs Schottky diodes
Creators
- 1. Experimental Physics Department, 'Nanostructured interfaces and surfaces' (NIS) Centre of Excellence of the University of Torino, and INFN - Torino (Italy) and INFM, Research Unit of Torino-University, Via P. Giuria 1, 10125 Torino (Italy)
- 2. INFN and Departimento di Fisica, Universita di Modena e Reggio Emilia, Via Campi, 213/A - 41100 Modena (Italy)
- 3. INFM, Research Unit of Torino-University, Via P. Giuria 1, 10125 Torino (Italy)
- 4. Experimental Physics Department, 'Nanostructured interfaces and surfaces' (NIS) Centre of Excellence of the University of Torino, and INFN - Torino (Italy)
- 5. INFN - Laboratori Nazionali di Legnaro, Viale dell'Universita 2, 35020 Legnaro (Pd) (Italy)
Description
Charge collection efficiency (CCE) profiles of a semi-insulating (SI) gallium arsenide LEC (Liquid Encapsulated Czochralski) Schottky diode have been investigated by lateral Ion Beam Induced Charge collection (IBIC) technique. A focussed 2.4 MeV proton microbeam was scanned over the cleaved surface of a SI-GaAs diode and the charge collection efficiency was evaluated as a function of the ion beam position at different bias voltages. By fitting the CCE profiles with the equations derived by the Shockley-Ramo-Gunn's theorem, drift lengths of electrons and holes were obtained. Experimental results are consistent with previous OBIC (Optical Beam Induced Current) and SP (Surface Potential) measurements and confirm the model based on the formation of a Mott barrier due to the enhanced electron capture cross section in high field conditions
Additional details
Identifiers
- DOI
- 10.1016/j.nimb.2005.01.109;
- PII
- S0168-583X(05)00130-8;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 231
- Journal Issue
- 1-4
- Journal Page Range
- p. 513-517
- ISSN
- 0168-583X
- CODEN
- NIMBEU
Conference
- Title
- 9. international conference on nuclear microprobe technology and applications
- Acronym
- ICNMTA-2004
- Dates
- 13-17 Sep 2004
- Place
- Cavtat (Croatia)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37013866
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BEAM CURRENTS; CHARGE COLLECTION; CROSS SECTIONS; EFFICIENCY; ELECTRON CAPTURE; ELECTRONS; GALLIUM ARSENIDES; HOLES; ION BEAMS; MEV RANGE 01-10; PROTONS; SCHOTTKY BARRIER DIODES; SURFACE POTENTIAL; SURFACES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BARYONS; BEAMS; CAPTURE; CURRENTS; ELEMENTARY PARTICLES; ENERGY RANGE; FERMIONS; GALLIUM COMPOUNDS; HADRONS; LEPTONS; MEV RANGE; NUCLEONS; PNICTIDES; POTENTIALS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.