Published August 1, 2009 | Version v1
Journal article

A theoretical model on surface electronic behavior: Strain effect

  • 1. College of Science, Northeast Dianli University, Jilin 132012 (China)
  • 2. Department of Mechanical and Manufacturing Engineering, University of Calgary, Calgary, Alberta, T2N 1N4 (Canada)

Description

Deformation from mechanical loading can affect surface electronic behavior. Surface deformation and electronic behavior can be quantitatively expressed using strain and work function, respectively, and their experimental relationship can be readily determined using the Kelvin probing technique. However, the theoretical correlation between work function and strain has been unclear. This study reports our theoretical exploration, for the first time, of the effect of strain on work function. We propose a simple electrostatic action model by considering the effect of a dislocation on work function of a one-dimensional lattice and further extend this model to the complex conditions for the effect of dislocation density. Based on this model, we established successfully a theoretical correlation between work function and strain.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.physb.2009.04.022

Additional details

Identifiers

DOI
10.1016/j.physb.2009.04.022;
PII
S0921-4526(09)00233-6;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
404
Journal Issue
16
Journal Page Range
p. 2247-2250
ISSN
0921-4526
CODEN
PHYBE3

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
41085162
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CORRELATIONS; DEFORMATION; DENSITY; DISLOCATIONS; ELECTRONS; SIMULATION; STRAINS; SURFACE PROPERTIES; SURFACES; WORK FUNCTIONS
Descriptors DEC
CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTARY PARTICLES; FERMIONS; FUNCTIONS; LEPTONS; LINE DEFECTS; PHYSICAL PROPERTIES

Optional Information

Copyright
Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.