Published 2005
| Version v1
Journal article
Rapid amorphisation and damage annealing in InGaAs at temperatures between 15 K and 300 K
Creators
- 1. Friedrich-Schiller-Univ. Jena, Inst. fuer Festkoerperphysik, Jena (Germany)
- 2. Dept. of Electronic Materials Engineering, Australian National Univ., Canberra (Australia)
Description
no abstract available
Additional details
Publishing Information
- Journal Title
- Verhandlungen der Deutschen Physikalischen Gesellschaft
- Journal Volume
- 40
- Journal Issue
- 2
- Journal Page Range
- p. 164
- ISSN
- 0420-0195
- CODEN
- VDPEAZ
Conference
- Title
- Physics since Albert Einstein
- Original Conference Title
- Jahrestagung 2005 der Deutschen Physikalischen Gesellschaft (DPG) im World Year of Physics: Physik seit Albert Einstein
- Acronym
- 2005 annual conference of the German Physical Society (DPG) during the World year of physics
- Dates
- 4-9 Mar 2005
- Place
- Berlin (Germany)
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 36039110
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- AMORPHOUS STATE; ANNEALING; GALLIUM ARSENIDES; INDIUM ARSENIDES; ORDER-DISORDER TRANSFORMATIONS; PHYSICAL RADIATION EFFECTS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; GALLIUM COMPOUNDS; HEAT TREATMENTS; INDIUM COMPOUNDS; PHASE TRANSFORMATIONS; PNICTIDES; RADIATION EFFECTS; TEMPERATURE RANGE