Infrared spectroscopy of the intermediate-valence semiconductor YbB12
- 1. Russian Academy of Sciences, Prokhorov General Physics Institute (Russian Federation)
- 2. Universitaet Stuttgart, Physikalisches Institut (Germany)
- 3. Hiroshima University, Graduate School of ADSM (Japan)
Description
The dynamic conductivity and permittivity spectra of the intermediate-valence compound YbB12 are measured in the frequency range (6-104) cm-1 (quantum energy 0.75 meV-1.24 eV) at temperatures of 5-300 K. Analysis of the spectral singularities associated with the response of free charge carriers has made it possible for the first time to determine the temperature dependences of their microscopic parameters, viz., concentration, effective mass, relaxation frequency and time, mobility, and plasma frequency. It is shown that the relaxation frequency decreases upon cooling from 300 K to the coherence temperature T* = 70 K for YbB12, which is mainly associated with the phonon mechanism of scattering of charge carriers. For cooling below the coherence temperature T* = 70 K, the temperature dependence of the relaxation frequency for charge carriers of the Fermi-liquid type is found to be γ ∼ γ0 + T2, while their effective mass and relaxation time increase, respectively, to m*(20 K) = 34m0 (m0 is the free electron mass) and τ(20 K) = 4 x 10-13 s, indicating the establishment of coherent scattering of carriers from localized magnetic moments of the f centers. At a temperature of T = 5 K, the conductivity spectrum contains an absorption line at a frequency of 22 cm-1 (2.7 meV); the origin of this line can be associated with the exciton-polaron bound state. Since such a state was observed earlier in other intermediate-valence semiconductors (such as SmB6, TmSe1-xTe, and (Sm, Y)S), it is probably typical of this class of compounds
Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Experimental and Theoretical Physics
- Journal Volume
- 103
- Journal Issue
- 6
- Journal Page Range
- p. 897-903
- ISSN
- 1063-7761
- CODEN
- JTPHES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39081656
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ABSORPTION SPECTROSCOPY; CHARGE CARRIERS; COHERENT SCATTERING; EFFECTIVE MASS; F CENTERS; INFRARED SPECTRA; LANGMUIR FREQUENCY; MAGNETIC MOMENTS; PERMITTIVITY; PHONONS; SAMARIUM BORIDES; SAMARIUM SULFIDES; SELENIUM TELLURIDES; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0000-0013 K; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0065-0273 K; THULIUM TELLURIDES; YTTRIUM SULFIDES
- Descriptors DEC
- BORIDES; BORON COMPOUNDS; CHALCOGENIDES; COLOR CENTERS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIELECTRIC PROPERTIES; ELECTRICAL PROPERTIES; MASS; MATERIALS; PHYSICAL PROPERTIES; POINT DEFECTS; QUASI PARTICLES; RARE EARTH COMPOUNDS; SAMARIUM COMPOUNDS; SCATTERING; SELENIUM COMPOUNDS; SPECTRA; SPECTROSCOPY; SULFIDES; SULFUR COMPOUNDS; TELLURIDES; TELLURIUM COMPOUNDS; TEMPERATURE RANGE; THULIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; VACANCIES; YTTRIUM COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2006 Pleiades Publishing, Inc.