Triangular double barrier resonant tunneling
Creators
- 1. Department of Electrical and Computer Engineering, Akashi College of Technology, Uozumi, Akashi, Hyogo 674-8501 (Japan)
Description
Double barrier structures with a triangle form have been studied by a transfer matrix method. Transmission coefficient was calculated systematically as a function of incident electron energy. The dependence of the various parameters such as well width, barrier height and barrier width on the spectrum shows distinctive features. The resonant energy is influenced even by the barrier width. When the barrier becomes thick and/or high, the resonant peak becomes sharpened and shifted to the higher energy. Even if the thickness and the height of the barriers are constant, the form of the triangular barrier affects the resonant energy. On the contrary, the triangular double barrier structure is less sensitive to the well width compared with a rectangular double barrier structure
Additional details
Identifiers
- DOI
- 10.1016/j.mseb.2004.09.021;
- PII
- S0921-5107(04)00488-X;
Publishing Information
- Journal Title
- Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
- Journal Volume
- 116
- Journal Issue
- 1
- Journal Page Range
- p. 87-90
- ISSN
- 0921-5107
- CODEN
- MSBTEK
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37114373
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ELECTRONS; THICKNESS; TRANSFER MATRIX METHOD; TRANSMISSION; TUNNEL DIODES; TUNNEL EFFECT
- Descriptors DEC
- CALCULATION METHODS; DIMENSIONS; ELEMENTARY PARTICLES; FERMIONS; LEPTONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES
Optional Information
- Copyright
- Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.