Spin Filters as High-Performance Spin Polarimeters
Creators
- 1. Laboratoire de Physique de la Matiere Condensee, UMR 7643 - CNRS, Ecole Polytechnique, 91128 Palaiseau cedex (France)
- 2. Laboratoire de Physique des Materiaux, UMR 7556 - CNRS, Universite Henri Poincare, 54506 Vandoeuvre-Les-Nancy (France)
Description
A spin-dependent transport experiment in which hot electrons pass through a ferromagnetic metal / semiconductor Schottky diode has been performed. A spin-polarized free-electron beam, emitted in vacuum from a GaAs photocathode, is injected into the thin metal layer with an energy between 5 and 1000 eV above to the Fermi level. The transmitted current collected in the semiconductor substrate increases with injection energy because of secondary - electron multiplication. The spin-dependent part of the transmitted current is first constant up to about 100 eV and then increases by 4 orders of magnitude. As an immediate application, the solid-state hybrid structure studied here leads to a very efficient and compact device for spin polarization detection
Additional details
Identifiers
- DOI
- 10.1063/1.1607284;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 675
- Journal Issue
- 1
- Journal Page Range
- p. 1001-1005
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- 15. international spin physics symposium and workshop on polarized electron sources and polarimeters
- Acronym
- SPIN 2002
- Dates
- 9-14 Sep 2002
- Place
- Upton, NY (United States)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36068499
- Subject category
- S72: PHYSICS OF ELEMENTARY PARTICLES AND FIELDS; S43: PARTICLE ACCELERATORS;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ACCELERATORS; BEAM OPTICS; ELECTRIC CURRENTS; ELECTRON BEAMS; ELECTRON SOURCES; ELECTRONS; EV RANGE; FERMI LEVEL; FILTERS; GALLIUM ARSENIDES; LAYERS; PERFORMANCE; PHOTOCATHODES; POLARIMETERS; POLARIZATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR MATERIALS; SPIN; SPIN ORIENTATION
- Descriptors DEC
- ANGULAR MOMENTUM; ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CATHODES; CURRENTS; ELECTRODES; ELEMENTARY PARTICLES; ENERGY LEVELS; ENERGY RANGE; FERMIONS; GALLIUM COMPOUNDS; LEPTON BEAMS; LEPTONS; MATERIALS; ORIENTATION; PARTICLE BEAMS; PARTICLE PROPERTIES; PARTICLE SOURCES; PNICTIDES; RADIATION SOURCES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES
Optional Information
- Notes
- (c) 2003 American Institute of Physics