Published May 15, 2001 | Version v1
Journal article Metadata-only

Wurtzite-zinc-blende polytypism in ZnSe on GaAs(111)A

Creators

  • 1. Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan)
  • 2. National Institute for Advanced Interdisciplinary Research (NAIR), Tsukuba 305-8562 (Japan)
  • 3. Joint Research Center for Atom Technology (JRCAT), Tsukuba 305-0046 (Japan)
  • 4. Angstrom Technology Partnership (ATP), Tsukuba 305-0046 (Japan)
  • 5. Research Institute for Scientific Measurements, Tohoku University, Sendai 980-8577 (Japan)
  • 6. Surface and Interface Laboratory, RIKEN, Wako, Saitama 351-0198 (Japan)

Description

We have studied the wurtzite (W)-zinc-blende (ZB) polytypism in ZnSe films grown on the (111)A-oriented substrates of GaAs. Although the stable structure of bulk ZnSe is ZB, W-structured ZnSe is formed near the interface on the ZB-structured GaAs(111)A substrate. Our first-principles calculations have revealed that the charge state at the ZnSe/GaAs(111)A interface plays a key role in the formation of W-ZnSe. We show that the structural quality of W-ZnSe is significantly improved using a cracked Se source, while ZB-ZnSe is grown using a vicinal GaAs(111)A substrate

Additional details

Identifiers

DOI
10.1103/PhysRevB.63.195325;

Publishing Information

Journal Title
Physical Review. B, Condensed Matter and Materials Physics
Journal Volume
63
Journal Issue
19
Journal Page Range
p. 195325-195325.4
ISSN
1098-0121

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
35081451
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
Descriptors DEI
CHARGE STATES; GALLIUM ARSENIDES; INTERFACES; PHASE TRANSFORMATIONS; SEMICONDUCTOR MATERIALS; THIN FILMS; ZINC SELENIDES
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CHALCOGENIDES; FILMS; GALLIUM COMPOUNDS; MATERIALS; PNICTIDES; SELENIDES; SELENIUM COMPOUNDS; ZINC COMPOUNDS

Optional Information

Notes
(c) 2001 The American Physical Society