Published September 11, 1999
| Version v1
Journal article
Preparation and properties of thick not intentionally doped GaInP(As)/GaAs layers
Creators
Description
We report on liquid-phase epitaxial growth of thick layers of GaInP(As), lattice matched to GaAs. Layers with thicknesses up to 10 μm were prepared in a multi-melt bin, step-cooling, one-phase configuration. Unintentionally doped layers, grown from moderate purity starting materials, show a significant decrease in the residual impurity level when erbium is added to the melt. Fundamental electrical and optical properties of the layers were investigated. (author)
Additional details
Identifiers
- PII
- S0168900299004568;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 434
- Journal Issue
- 1
- Journal Page Range
- p. 164-168
- ISSN
- 0168-9002
- CODEN
- NIMAER
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- India
- INIS RN
- 34042920
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- DOPED MATERIALS; EUROPIUM; GALLIUM ARSENIDES; INDIUM ARSENIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; RADIATION DETECTORS; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; ELEMENTS; EMISSION; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LUMINESCENCE; MATERIALS; MEASURING INSTRUMENTS; METALS; PHOTON EMISSION; PNICTIDES; RARE EARTHS
Optional Information
- Copyright
- Copyright (c) 1999 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.