Rapid doping process of semiconductors

This invention presents different methods for implanting particles in a substrate for fast doping of semiconductors. The implantation may be done by an interaction between a laser beam and a target composed of the doping substance, by a plasma accelerator enabling the beam of ions to be focused, by a reflexion triode, by a diode composed of a cathode and an anode placed in a magnetic field perpendicular to the electric field created between the cathode and the anode composed of a doping substance, by a diode constituted by a cathode emitting electrons, these electrons are picked up by a round shape anode and made of the doping substance, the interaction of the electrons with the anode enabling the focused beam of ions to be produced, by a source of spark discharge under vacuum, or by a supersonic release of steam through a nozzle in vacuo. The particles can also be combined with another beam of particles or accelerated under an electric field