Published February 1989 | Version v1
Journal article Metadata-only

Configurational rearrangements of bistable centers in covalent semiconductors - phase transitions of the second type

Creators

  • 1. Belorusskij Gosudarstvennyj Univ., Minsk (Byelorussian SSR). Inst. Prikladnykh Fizicheskikh Problem

Description

A new radiation configurational-bistable defect diffring from the known similar defects by the fact that it possessestemperature inversion of states is detected in gallium arsenide. Configurational-bistable rearrangements are shown to be considered as phase transitions of the second type

Additional details

Additional titles

Original title (Russian)
Конфигурационные перестройки бистабильных центров в ковалентных полупроводниках - фазовые переходы второго рода

Publishing Information

Journal Title
Fizika i Tekhnika Poluprovodnikov
Journal Volume
33
Journal Issue
2
Series
Fiz. Tekh. Poluprovodn.
Journal Page Range
264-267
ISSN
0015-3222
CODEN
FTPPA

INIS

Country of Publication
Russian Federation
Country of Input or Organization
USSR
INIS RN
20073280
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ANNEALING; ARRHENIUS EQUATION; CONFIGURATION INTERACTION; CRYSTAL DEFECTS; DIAGRAMS; ELECTRON BEAMS; EPITAXY; FILMS; GALLIUM ARSENIDES; GAMMA RADIATION; LOW TEMPERATURE; MEV RANGE 01-10; MEV RANGE 10-100; N-TYPE CONDUCTORS; PHASE TRANSFORMATIONS; PHYSICAL RADIATION EFFECTS; TEMPERATURE DEPENDENCE
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ENERGY RANGE; GALLIUM COMPOUNDS; HEAT TREATMENTS; INFORMATION; IONIZING RADIATIONS; LEPTON BEAMS; MATERIALS; MEV RANGE; PARTICLE BEAMS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR MATERIALS