Preparation of waveguide heterostructures GaInPAs/InP

Conditions of liquid-phase epitaxy for preparation of waveguide heterostructures and observation of the waveguide effect are found out. It is noted that the waveguide effect is observed in prepared heterostructures and established values of radiation absorptance are in agreement with the results of previous estimates. A conclusion is drawn that according to the obtained characteristics isoperiodic Gasub(x)Insub(1-x) PyAssub(1-y)/InP (100) heterostructures with perfect structure may be used effectively in optic-electronic integral devices