Mechanisms of conductivity conversion in extrinsically and intrinsically doped p-HgCdTe solid solutions under low energy ion beam milling

This study focuses on establishing the mechanisms of ion beam milling (IBM) inducing p-to-n conversion in p-Hg1-xCdxTe. The type conductivity conversion in Cu doped p-Hg1-xCdxTe was observed experimentally for the first time. It is demonstrated that the main peculiarities of the type conductivity conversion in both extrinsically (As, Sb or Cu) and intrinsically (Hg vacancy) doped p-Hg1-xCdxTe are explained on the basis of the model of superfast Hg interstitials diffusion from the mercury diffusion source with very high interstitials concentration. However, the donors are formed in acceptor-specific manner. Particularly, in Cu doped p-Hg1-xCdxTe conductivity change occurs because the diffusing Hg interstitials kick-out Cu atoms from the cation sublattice, creating Cu interstitials which acts as donors. Influence of the internal electric field on conversion processes is considered