Evolutionary continuous cellular automaton for the simulation of wet etching of quartz
Creators
- 1. Instituto de Instrumentación para Imagen Molecular (I3M), Centro mixto CSIC—Universitat Politècnica de València—CIEMAT, camino de Vera s/n, 46022 Valencia (Spain)
- 2. Department of Materials Physics, University of the Basque Country (UPV-EHU) and Donostia International Physics Center (DIPC), 20018 Donostia-San Sebastian (Spain)
Description
Anisotropic wet chemical etching of quartz is a bulk micromachining process for the fabrication of micro-electro-mechanical systems (MEMS), such as resonators and temperature sensors. Despite the success of the continuous cellular automaton for the simulation of wet etching of silicon, the simulation of the same process for quartz has received little attention—especially from an atomistic perspective—resulting in a lack of accurate modeling tools. This paper analyzes the crystallographic structure of the main surface orientations of quartz and proposes a novel classification of the surface atoms as well as an evolutionary algorithm to determine suitable values for the corresponding atomistic removal rates. Not only does the presented evolutionary continuous cellular automaton reproduce the correct macroscopic etch rate distribution for quartz hemispheres, but it is also capable of performing fast and accurate 3D simulations of MEMS structures. This is shown by several comparisons between simulated and experimental results and, in particular, by a detailed, quantitative comparison for an extensive collection of trench profiles. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/0960-1317/22/2/025021Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Micromechanics and Microengineering. Structures, Devices and Systems
- Journal Volume
- 22
- Journal Issue
- 2
- Journal Page Range
- [14 p.]
- ISSN
- 0960-1317
- CODEN
- JMMIEZ
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47014300
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANISOTROPY; ATOMS; COMPARATIVE EVALUATIONS; CRYSTALLOGRAPHY; DISTRIBUTION; ETCHING; MACHINING; MEMS; QUARTZ; RESONATORS; SENSORS; SILICON; SIMULATION; SURFACES; THREE-DIMENSIONAL CALCULATIONS
- Descriptors DEC
- ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; EVALUATION; MINERALS; OXIDE MINERALS; SEMIMETALS; SURFACE FINISHING