Strain-tunable topological quantum phase transition in buckled honeycomb lattices
- 1. Department of Physics, Astronomy, and Geosciences, Towson University, 8000 York Road, Towson, Maryland 21252 (United States)
- 2. Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701 (United States)
- 3. Department of Physics, Washington University, St Louis, Missouri 63005 (United States)
Description
Low-buckled silicene is a prototypical quantum spin Hall insulator with the topological quantum phase transition controlled by an out-of-plane electric field. We show that this field-induced electronic transition can be further tuned by an in-plane biaxial strain ε, owing to the curvature-dependent spin-orbit coupling (SOC): There is a Z2 = 1 topological insulator phase for biaxial strain |ε| smaller than 0.07, and the band gap can be tuned from 0.7 meV for ε=+0.07 up to 3.0 meV for ε=−0.07. First-principles calculations also show that the critical field strength Ec can be tuned by more than 113%, with the absolute values nearly 10 times stronger than the theoretical predictions based on a tight-binding model. The buckling structure of the honeycomb lattice thus enhances the tunability of both the quantum phase transition and the SOC-induced band gap, which are crucial for the design of topological field-effect transistors based on two-dimensional materials
Additional details
Identifiers
- DOI
- 10.1063/1.4919885;
- arXiv
- arXiv:1503.05375v1;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 106
- Journal Issue
- 18
- Journal Page Range
- p. 183107-183107.4
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46104713
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BUCKLING; CRITICAL FIELD; ELECTRIC FIELDS; FIELD EFFECT TRANSISTORS; HALL EFFECT; L-S COUPLING; PHASE TRANSFORMATIONS; SILICENE; SPIN; STRAINS; TOPOLOGY; TWO-DIMENSIONAL SYSTEMS
- Descriptors DEC
- ANGULAR MOMENTUM; COUPLING; CRYSTAL LATTICES; CRYSTAL STRUCTURE; ELEMENTS; INTERMEDIATE COUPLING; MAGNETIC FIELDS; MATHEMATICS; PARTICLE PROPERTIES; SEMICONDUCTOR DEVICES; SEMIMETALS; SILICON; TRANSISTORS
Optional Information
- Notes
- (c) 2015 AIP Publishing LLC