Published 1984
| Version v1
Book
Intrinsic and impurity defects in group A4B6 compounds
Creators
Description
A survey of papers dealing with structure and properties of compounds of the A4B6 group is made. Predominant atomic defects and quasichemical reactions of their formation in lead chalcogenide and solid solutions on their base are considered. Experimental data on the control of crystals composition and properties are presented. Conditions for obtaining qualitatively new properties of semiconductor compounds of this group promising for an application in thermoelectrical devices operating at 800-900 K are defined. Methods of the PbsUb(1-x)Snsub(x)Te solid solution alloying and crystal growing from the melt and vapor are described
Additional details
Additional titles
- Original title (Russian)
- Собственные и примесные дефекты в соединениях группы А
Publishing Information
- Publisher
- Nauka.
- Imprint Place
- Novosibirsk (USSR)
- Imprint Title
- Growth of semiconductor crystals and films
- Journal Page Range
- p. 116-133.
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 16077093
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CARRIER DENSITY; CHARGE CARRIERS; CRYSTAL DEFECTS; CRYSTAL GROWTH; DOPED MATERIALS; LEAD TELLURIDES; PHASE DIAGRAMS; QUANTITY RATIO; REVIEWS; SEMICONDUCTOR MATERIALS; SOLID SOLUTIONS; TIN TELLURIDES; TRACE AMOUNTS
- Descriptors DEC
- CHALCOGENIDES; CRYSTAL STRUCTURE; DIAGRAMS; DISPERSIONS; DOCUMENT TYPES; HOMOGENEOUS MIXTURES; INFORMATION; LEAD COMPOUNDS; MATERIALS; MIXTURES; SOLUTIONS; TELLURIDES; TELLURIUM COMPOUNDS; TIN COMPOUNDS
Optional Information
- Notes
- 73 refs.; 7 figs.; 2 tabs. Imprint:Rost poluprovodnikovykh kristallov i plenok.;Chast' 2. Novye metodiki, legirovanie, kriterii funktsional'noj prigodnosti materialov.