Nitrogen implantation in GaAs/sub 1-x/P/sub x/. II. Annealing properties

Efficient photoluminescence has been obtained from GaAs/sub 1-x/P/sub x/ implanted with N at room temperature. With appropriate annealing, emission intensities comparable with conventionally doped material are realized for N-implanted GaAs/sub 1-x/P/sub x/ crystals of both direct- and indirect-band-gap compositions. Anneal temperatures of at least 950 degreeC with dielectric encapsulation are necessary to incorporate the implanted N on optically active sites, although much of the implantation-induced lattice disorder is removed by annealing to 700 degreeC. Anneal characteristics are investigated by both isochronal and isothermal anneals, and comparison is made between room-temperature and hot implantations. Effects of damage introduced by optically inactive implanted Ne are compared to results for implanted N. The effects of annealing in the presence of arsenic and gallium vapor are studied, and depth profiles of lattice damage and optically active N are obtained