Properties of SnO2 films fabricated using a rectangular filtered vacuum arc plasma source
- 1. Fleischman Faculty of Engineering, Tel-Aviv University, POB 39040, Tel-Aviv 69978 (Israel)
- 2. Electrical Discharge and Plasma Laboratory, Tel-Aviv University, POB 39040, Tel-Aviv 69978 (Israel)
- 3. Physics Department, Cukurova University, Adana 01330 (Turkey)
- 4. Sackler Faculty of Exact Sciences, School of Physics and Astronomy, Tel-Aviv University, POB 39040, Tel-Aviv 69978 (Israel)
Description
Transparent and conducting SnO2 films of 57-200nm thickness were deposited on microscope glass slide substrates, using a rectangular filtered vacuum arc deposition system. The 40 glass slides were equally distributed on a 400 x 420mm substrate carriage, and were exposed to a Sn plasma beam, produced by a rectangular vacuum arc plasma gun with a Sn cathode, and passed through a rectangular magnetic macroparticle filter towards the substrates. The carriage with the substrates was transported past the 94 x 494mm filter outlet. The SnO2 films were fabricated on the glass substrates at room temperature by maintaining the chamber oxygen background pressure at 0.52Pa. The film composition, and electrical and optical properties were studied as a function of the film thickness. The films were stored under ambient air conditions, and their electrical resistance was measured as a function of storage time over a period of several months. The average resistivity of films was 10-17mΩ cm for films with thickness (t) less than 100nm, but that of t > 100nm it was 5-9mΩ cm. The resistivity of the films with t > 100nm did not change significantly after 8months of storage in ambient air. The optical transmittance of the films in the visible spectrum was in the range of 75-90%. The optical constants, i.e., the refractive index and the extinction coefficient of the films at wavelength λ = 550nm were in the range of 2.02-2.09 and 0.013-0.023, respectively, and the optical band gap energy was 4.15-4.21eV. Unlike the electrical resistivity, the optical parameters weakly depended on t
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2008.02.020Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2008.02.020;
- PII
- S0040-6090(08)00210-1;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 516
- Journal Issue
- 15
- Journal Page Range
- p. 5079-5086
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40005726
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CATHODES; DEPOSITION; ELECTRIC CONDUCTIVITY; FILTERS; GLASS; OXYGEN; PLASMA; PLASMA GUNS; REFRACTIVE INDEX; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; TIN OXIDES; VISIBLE SPECTRA
- Descriptors DEC
- CHALCOGENIDES; ELECTRICAL PROPERTIES; ELECTRODES; ELEMENTS; FILMS; NONMETALS; OPTICAL PROPERTIES; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SPECTRA; TEMPERATURE RANGE; TIN COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.