Published 2002
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Magnetoresistance in epitaxial layer of Ga1-xMnxAs doped by Be
- 1. Heat Physics Department of AS RU, Tashkent (Uzbekistan)
- 2. Dongguk University, Seoul (Korea, Republic of)
Description
no abstract available
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38115498.pdf
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Additional details
Additional titles
- Original title (Russian)
- Ehffekt magnitosoprotivleniya v ehpitaksial'nykh sloyakh Ga
Publishing Information
- Publisher
- Oezbekiston Respublikasi Fanlar Akademiyasi Yadro Fizikasi Instituti
- Imprint Place
- Tashkent (Uzbekistan)
- Imprint Title
- Book of abstracts of republic conference of young physicists of Uzbekistan
- Imprint Pagination
- 103 p.
- Journal Page Range
- p. 60-61
- Report number
- INIS-UZ--125
Conference
- Title
- Republic conference of young physicists of Uzbekistan
- Original Conference Title
- Respublikanskaya konferentsiya molodykh fizikov Uzbekistana
- Dates
- 3-4 Dec 2002
- Place
- Tashkent (Uzbekistan)
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 38115498
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- CURIE POINT; FERROMAGNETISM; GALLIUM ARSENIDES; MAGNETIC SEMICONDUCTORS; MAGNETORESISTANCE; MANGANESE ARSENIDES; VAPOR PHASE EPITAXY
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; EPITAXY; GALLIUM COMPOUNDS; MAGNETISM; MANGANESE COMPOUNDS; MATERIALS; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR MATERIALS; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENT COMPOUNDS; TRANSITION TEMPERATURE
Optional Information
- Notes
- Imprint:Sbornik tezisov respublikanskoj konferentsii molodykh fizikov Uzbekistana