Effect of seeding on formation of silicon carbide nanostructures from mesoporous silica-carbon nanocomposites
- 1. Department of Materials Engineering, Monash University, Clayton Campus, Victoria 3800 (Australia)
- 2. Department of Chemical Engineering, Monash University, Clayton Campus, Victoria 3800 (Australia)
Description
Mesoporous silica-carbon nanocomposites (C-SiO2) were synthesized for the fabrication of highly crystalline silicon carbide (SiC) nanoparticles and nanofibers via carbothermal reduction. SiC nuclei were introduced into the mesopores as seeds by infiltration of preceramic precursor polycarbosilane (PCS) prior to the heat treatment of carbothermal reduction. When PCS with a mass percentage of 11-13% was infiltrated into the mesoporous C-SiO2, SiC nanofibers and nanoparticles were produced at 1450 deg. C, even in the sample with low carbon content. The major morphology formed from the mesoporous C-SiO2 nanocomposites without PCS infiltration was nanoparticles, while nanofibers dominated in the products of PCS-infiltrated compositions. The results indicate that the conversion of PCS into SiC nuclei in mesopores prior to carbothermal reduction has facilitated the formation of SiC nanofibers. Therefore infiltration of seeds into mesopores of C-SiO2 precursors appears to be an effective means of accelerating the reaction and controlling SiC nanostructures
Availability note (English)
Available from http://dx.doi.org/10.1088/0957-4484/19/17/175605Additional details
Identifiers
- DOI
- 10.1088/0957-4484/19/17/175605;
- PII
- S0957-4484(08)65572-5;
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 19
- Journal Issue
- 17
- Journal Page Range
- [8 p.]
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39108454
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CARBON; COMPOSITE MATERIALS; FABRICATION; HEAT TREATMENTS; MORPHOLOGY; NANOSTRUCTURES; PARTICLES; REDUCTION; SILICA; SILICON CARBIDES; SILICON OXIDES; TEMPERATURE RANGE 1000-4000 K
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; CHALCOGENIDES; CHEMICAL REACTIONS; ELEMENTS; MATERIALS; MINERALS; NONMETALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; SILICON COMPOUNDS; TEMPERATURE RANGE