Published August 1974
| Version v1
Journal article
Defect centers in a germanium-doped silica-core optical fiber
- 1. Naval Research Laboratory, Washington, D.C. 20375
Description
The radiation-induced defect centers in a low-loss Corning germanium-doped optical fiber have been studied. In addition to silicon E′ centers, four germanium-related centers, corresponding to electrons trapped at the site of oxygen vacancies in s p3 orbitals of germanium ions with zero to three next-nearest-neighbor germaniums, were observed. A model which assumes Gaussian distributions in the excited-state energy-level splittings has been successfully used to computer simulate the ESR spectrum of the irradiated fiber.
Additional details
Additional titles
- Augmented title (English)
- E"1 centers, Ge-related centers, radiation-induced optical loss
Identifiers
- DOI
- 10.1063/1.1663795;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 45
- Journal Issue
- 8
- Series
- J. Appl. Phys.
- Journal Page Range
- 3424-3428
- ISSN
- 0021-8979
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 6157743
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; ATTENUATION; CRYSTAL DEFECTS; DOPED MATERIALS; ELECTRON SPIN RESONANCE; ENERGY-LEVEL TRANSITIONS; GERMANIUM; PHYSICAL RADIATION EFFECTS; SILICON OXIDES; SIMULATION; WAVEGUIDES
- Descriptors DEC
- CHALCOGENIDES; CRYSTAL STRUCTURE; ELEMENTS; HEAT TREATMENTS; MAGNETIC RESONANCE; METALS; OXIDES; OXYGEN COMPOUNDS; RADIATION EFFECTS; RESONANCE; SILICON COMPOUNDS
Optional Information
- Notes
- Updated automatically by Metadata and Full-Text Enrichment Agent