Flexible logic gates composed of high performance GaAs-nanowire-based MESFETs with MHz-dynamic operations

High performance NOT, NAND and NOR logic gates composed of GaAs-nanowire (NW)-based metal–semiconductor field-effect transistors (MESFETs) were constructed on flexible plastics through a noble top-down route. The representative GaAs-NW-based MESFETs exhibited superior electrical characteristics such as a high mobility (∼3300 cm2 V−1 s−1), large Ion/Ioff ratio (∼108) and small subthreshold swing (∼70 mV/dec). The NOT, NAND and NOR logic gates showed a maximum voltage gain of 108 and logic swings of 97–99%. All of the logic gates successfully retained their electrical characteristics during 2000 bending cycles. Furthermore, the logic gates were well operated by square-wave signals of up to 100 MHz under various strain conditions. The high performances demonstrated in this study open the way to the realization of high speed flexible logic devices.