Thermal treatment effect on phase composition of Mo+Si films produced by codeposition and magnetron sputtering

Variation of phase composition in M0+Si films on silicon dioxide substrate as well as on two oriented (100) and (111) monocrystalline silicon plates deposited from two electron-beam sources or produced by magnetron sputtering of variable composition targets is studied using X-ray technique. Substrate silicon participates in formation of silicide phases in Mo+Si/Si (100) and Mo+Si/Si (111) condensates exposed to high-temperature annealing at 1270 K during 30 min. It results in formation of maximal amounts of final disilicide MoSi2 in films with silicon content lower, than stoichiometric one (Si:Mo<-). This effect manifests itself in substrates of (111) orientation as compared to orientation