Published June 1997 | Version v1
Journal article Metadata-only

Photoluminescence of SiO2 layers implanted with Si+ ions and annealed in a pulse mode

Creators

  • 1. Inst. Fiziki Poluprovodnikov Sibirskogo Otdeleniya RAN, Novosibirsk (Russian Federation)
  • 2. Issledovatel'skij Tsentr Rossendorf (Germany)

Description

Thermally grown SiO2 layers were implanted with 1017 cm-2 Si+ ions of 100 and 200 keV. The samples were annealed then by 1 s pulses to 900-1200 deg C or 20 ms pulses to 1050-1350 deg C. Visible and infrared photoluminescence have been observed in implanted samples. During pulse its intensity initially decreased but after 1200 deg C x 1 s or 1350 deg C x 20 ms treatment the emission rose more than an order. For that samples Raman spectroscopy and HREM revealed the formation of Si nanocrystals

Additional details

Additional titles

Original title (Russian)
Фотолюминесценция слоев SiO

Publishing Information

Journal Title
Fizika i Tekhnika Poluprovodnikov
Journal Volume
31
Journal Issue
6
Journal Page Range
p. 730-734
ISSN
0015-3222
CODEN
FTPPA4

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
30001460
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ANNEALING; CRYSTALS; EMISSION SPECTRA; ION IMPLANTATION; KEV RANGE 100-1000; PHOTOLUMINESCENCE; RADIATION DOSES; RAMAN SPECTROSCOPY; SILICON IONS; SILICON OXIDES; TEMPERATURE RANGE 1000-4000 K
Descriptors DEC
CHALCOGENIDES; CHARGED PARTICLES; EMISSION; ENERGY RANGE; HEAT TREATMENTS; IONS; KEV RANGE; LASER SPECTROSCOPY; LUMINESCENCE; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; SILICON COMPOUNDS; SPECTRA; SPECTROSCOPY; TEMPERATURE RANGE

Optional Information

Notes
20 refs., 4 figs.