Published January 2017
| Version v1
Journal article
Effect of active-region "volume" on the radiative properties of laser heterostructures with radiation output through the substrate
Creators
- 1. Nizhny Novgorod State University, Physicotechnical Research Institute (Russian Federation)
- 2. Belarussian State University (Belarus)
Description
The radiative properties of InGaAs/GaAs/InGaP laser structures with radiation output through the substrate depending on the number of quantum wells in the active region and laser diodes on their basis are investigated. It is established that the presence of six–eight quantum wells in the active region is optimum from the viewpoint of observable values of the threshold current and the output optical power of lasers.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 51
- Journal Issue
- 1
- Journal Page Range
- p. 73-77
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48098284
- Subject category
- S36: MATERIALS SCIENCE; S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; LASER RADIATION; LASERS; QUANTUM WELLS; SUBSTRATES; THRESHOLD CURRENT
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CURRENTS; ELECTRIC CURRENTS; ELECTROMAGNETIC RADIATION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; NANOSTRUCTURES; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; RADIATIONS; SEMICONDUCTOR JUNCTIONS
Optional Information
- Copyright
- Copyright (c) 2017 Pleiades Publishing, Ltd.