Electro-regeneration of Ce(IV) in real spent Cr-etching solutions

Highlights: • An electrochemical process is used to regenerate Ce(IV) in real (hazardous) spent TFT-LCD Cr-etching solutions. • The Ce(IV) yield on tested anodes was in order BDD > Pt > DSA. • A Neosepta CMX separator was better than Nafion ones to be used in the process. • The activation energy on Pt was 10.7 kJ/mol. • The obtained parameters are useful to design reactors for 100% Ce(IV) regeneration in real spent Cr-etching solutions. -- Abstract: This paper presents the electro-regeneration of Ce(IV) in real (hazardous) spent thin-film transistor liquid-crystal display (TFT-LCD) Cr-etching solutions. In addition to Ce(III) > Ce(IV) in diffusivity, a quasi-reversible behavior of Ce(III)/Ce(IV) was observed at both boron-doped diamond (BDD) and Pt disk electrodes. The Ce(IV) yield on Pt increased with increasing current density, and the best current efficiency (CE) was obtained at 2 A/2.25 cm2. The performance in terms of Ce(IV) yield and CE of tested anodes was in order BDD > Pt > dimensional stable anode (DSA). At 2 A/2.25 cm2 on Pt and 40 °C for 90 min, the Ce(IV) yield, CE and apparent rate constant (k) for Ce(III) oxidation were 81.4%, 21.8% and 3.17 × 10−4 s−1, respectively. With the increase of temperature, the Ce(IV) yield, CE, and k increased (activation energy = 10.7 kJ/mol), but the specific electricity consumption decreased. The Neosepta CMX membrane was more suitable than Nafion-117 and Nafion-212 to be used as the separator of the Ce(IV) regeneration process. The obtained parameters are useful to design divided batch reactors for the Ce(IV) electro-regeneration in real spent Cr-etching solutions