Published 1973 | Version v1
Report Metadata-only

Recoil implantation of Ga in Si by Ar+ ions

Creators

  • 1. Bhabha Atomic Research Centre, Bombay (India). Nuclear Physics Div.

Description

no abstract available

Additional details

Publishing Information

Imprint Title
Van de Graaff Laboratory progress report
Imprint Pagination
p. 52-56.
Report number
BARC--692

INIS

Country of Publication
India
Country of Input or Organization
India
INIS RN
5141690
Subject category
S43: PARTICLE ACCELERATORS;
Resource subtype / Literary indicator
Progress Report
Descriptors DEI
ARGON IONS; CRYSTAL DOPING; GALLIUM; ION IMPLANTATION; KEV RANGE 10-100; LABORATORY EQUIPMENT; MONOCRYSTALS; PHYSICAL RADIATION EFFECTS; RECOILS; SILICON; ULTRAHIGH TEMPERATURE
Descriptors DEC
CHARGED PARTICLES; CRYSTALS; ELEMENTS; ENERGY RANGE; IONS; KEV RANGE; METALS; RADIATION EFFECTS; SEMIMETALS