Published March 3, 2014 | Version v1
Journal article Metadata-only

Heteroepitaxial growth of Cu2ZnSnS4 thin film on sapphire substrate by radio frequency magnetron sputtering

Creators

  • 1. School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW 2052 (Australia)
  • 2. Mark Wainwright Analytical Center, University of New South Wales, Sydney, NSW 2052 (Australia)
  • 3. Department of Materials Science and Engineering, Xiamen University, Xiamen 361005, Fujian Province (China)

Description

The heteroepitaxy of tetragonal Cu2ZnSnS4 (CZTS) thin films on hexagonal sapphire (0001) single crystal substrates is successfully obtained by radio frequency magnetron sputtering. The sputtered CZTS film has a mirror-like smooth surface with a root mean square roughness of about 5.44 nm. X-ray θ-2θ scans confirm that CZTS film is (112) oriented on sapphire with an out of plane arrangement of CZTS (112) ‖ sapphire (0001). X-ray Phi scan further illustrates an in plane ordering of CZTS [201¯] ‖ sapphire [21¯1¯0]. The high resolution transmission electron microscopy image of the interface region clearly shows that the CZTS thin film epitaxially grows on the sapphire (0001) substrate. The band gap of the film is found to be approximately 1.51 eV

Additional details

Identifiers

DOI
10.1063/1.4867093;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
104
Journal Issue
9
Journal Page Range
p. 092103-092103.4
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45104463
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
COPPER COMPOUNDS; CRYSTAL GROWTH; CRYSTAL STRUCTURE; ELECTRONIC STRUCTURE; ENERGY GAP; EPITAXY; INTERFACES; MONOCRYSTALS; RADIOWAVE RADIATION; ROUGHNESS; SAPPHIRE; SPUTTERING; SUBSTRATES; SURFACES; THIN FILMS; TIN SULFIDES; TRANSMISSION ELECTRON MICROSCOPY; ZINC COMPOUNDS
Descriptors DEC
CHALCOGENIDES; CORUNDUM; CRYSTAL GROWTH METHODS; CRYSTALS; ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; FILMS; MICROSCOPY; MINERALS; OXIDE MINERALS; RADIATIONS; SULFIDES; SULFUR COMPOUNDS; SURFACE PROPERTIES; TIN COMPOUNDS; TRANSITION ELEMENT COMPOUNDS

Optional Information

Notes
(c) 2014 AIP Publishing LLC