Published May 1983
| Version v1
Journal article
Radiation-enhanced diffusion in helium-ion-irradiated germanium
Creators
- 1. AN SSSR, Novosibirsk. Inst. Fiziki Poluprovodnikov
Description
N-type germanium (antimony donor atoms) was irradiated by 400-1200 keV helium ions at 2x1014-2x1016 cm-2 doses in the 100-870 K temperature range. It is found that germanium under irradiation converted down to great depths (approximately 30 μm). The p layer extent sharply grows at irradiation temperatures of > or approximately 870 K. The observed set of data permits to propose a model of process when interstitial germanium atoms diffuse out of their production area to great distances converting doped addition (antimony atoms) into inactive state
Additional details
Additional titles
- Original title (Russian)
- Эффекты радиационно-ускоренной диффузии в германии, облученном ионами гелия
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 17
- Journal Issue
- 5
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 859-862
- ISSN
- 0015-3222
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 14803622
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; ANTIMONY ADDITIONS; DEPTH; DIFFUSION; GERMANIUM; HELIUM IONS; HIGH TEMPERATURE; INTERSTITIALS; KEV RANGE 100-1000; LOW TEMPERATURE; MEDIUM TEMPERATURE; MEV RANGE 01-10; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; TEMPERATURE DEPENDENCE
- Descriptors DEC
- CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIMENSIONS; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; IONS; KEV RANGE; MATERIALS; METALS; MEV RANGE; POINT DEFECTS; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS
Optional Information
- Notes
- For English translation see the journal Soviet Physics - Semiconductors (USA).