Published February 1, 2010
| Version v1
Journal article
TEM analysis of Ge-on-Si MOSFET structures with HfO2 dielectric for high performance PMOS device technology
Creators
- 1. Department of Electronic and Electrical Engineering, University of Sheffield, Sir Frederick Mappin Building, Mappin Street, Sheffield, S1 3JD (United Kingdom)
- 2. Department of Physics, University of Warwick, Coventry, CV4 7AL (United Kingdom)
- 3. IMEC, Kapeldreef 75, B-3001 Leuven (Belgium)
- 4. Department of Electronics and Electrical Engineering, Rankine Building, Oakfield Avenue, Glasgow, G12 8LT (United Kingdom)
Description
In this paper, we present a (scanning) transmission electron microscopy analysis of novel Ge-on-Si MOSFETs which incorporate a high-k HfO2 dielectric and TaN/TiN metal gate electrodes. A key feature of these devices is the incorporation of a very thin (∼1nm) Si passivation layer on top of the Ge virtual substrate, which is partially oxided to form SiO2 (∼0.5nm), before depositing the HfO2 dielectric and TaN and TiN metal gate electrodes. Our results confirm the architecture of the device structures and the existence of Si passivation.
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-6596/209/1/012061Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 209
- Journal Issue
- 1
- Journal Page Range
- [4 p.]
- ISSN
- 1742-6596
Conference
- Title
- 16. international conference on microscopy of semiconducting materials
- Dates
- 17-20 Mar 2009
- Place
- Oxford (United Kingdom)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42041353
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- DIELECTRIC MATERIALS; GERMANIUM; HAFNIUM OXIDES; INTERFACES; LAYERS; MOSFET; PASSIVATION; PERFORMANCE; SILICON; SILICON OXIDES; SUBSTRATES; TANTALUM NITRIDES; TITANIUM NITRIDES; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- CHALCOGENIDES; ELECTRON MICROSCOPY; ELEMENTS; FIELD EFFECT TRANSISTORS; HAFNIUM COMPOUNDS; MATERIALS; METALS; MICROSCOPY; MOS TRANSISTORS; NITRIDES; NITROGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PNICTIDES; REFRACTORY METAL COMPOUNDS; SEMICONDUCTOR DEVICES; SEMIMETALS; SILICON COMPOUNDS; TANTALUM COMPOUNDS; TITANIUM COMPOUNDS; TRANSISTORS; TRANSITION ELEMENT COMPOUNDS