Electron irradiation effect on properties of germanium-silicon solid solutions doped with copper

The effect of 2.2 MeV electron radiation on properties of germanium and Gesub(0.975)SisUb(0.025) solid solution alloyed with copper is investigated. Irradiation has been conducted at room temperature. Temperature dependences of hole concentration oin the 20-300 K range and photoconductivity spectra in the 2-25 μm range of wave length at 12 K are investigated. Hole concentration is stated to decrease under radiation that results froma decrease of the number of acceptor centres. It is shown that difference in the effect of radiation on these properties may be explained based on repre-- sentations on capture of germanium interstitials by silicon and copper atoms. Thus, additional p-Ge < Cu > alloying with silicon permits to control the process of radiation-induced defect formation