Published March 1975
| Version v1
Journal article
On the comparison of radiation-induced defects in Si and Ge due to their irradiation with protons of 660 MeV and reactor fast neutrons
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- К сравнению радиационных повреждений в Си и Ге при облучении их протонами с энергией 660 MeV и быстрыми нейтронами реактора
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 9
- Journal Issue
- 3
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 538-541
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 7220881
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- CRYSTAL DEFECTS; ENERGY DEPENDENCE; FAST NEUTRONS; GERMANIUM; IRRADIATION; MEAN FREE PATH; MEV RANGE 100-1000; PHYSICAL RADIATION EFFECTS; PROTONS; RECOILS; SILICON
- Descriptors DEC
- BARYONS; CATIONS; CHARGED PARTICLES; CRYSTAL STRUCTURE; ELEMENTARY PARTICLES; ELEMENTS; ENERGY RANGE; FERMIONS; HADRONS; HYDROGEN IONS; HYDROGEN IONS 1 PLUS; IONS; METALS; MEV RANGE; NEUTRONS; NUCLEONS; RADIATION EFFECTS; SEMIMETALS
Optional Information
- Notes
- Published in summary form only; for English translation see the journal Sov. Phys. - Semicond.